- 专利标题： Adjustment of a pre-read operation associated with a write operation
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申请号： US16057537申请日： 2018-08-07
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公开(公告)号： US10761754B2公开(公告)日： 2020-09-01
- 发明人: Zhenlei E. Shen , Zhengang Chen , Tingjun Xie , Jiangli Zhu
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Lowenstein Sandler LLP
- 主分类号： G06F3/06
- IPC分类号： G06F3/06 ; G11C13/00
摘要：
Data can be received at a memory sub-system. A characteristic of the memory sub-system can be identified. A read voltage level can be determined based on the characteristic of the memory sub-system. A read operation can be performed at the memory sub-system based on the read voltage level to retrieve stored data. The received data can be stored at the memory sub-system based on the stored data that was retrieved from the read operation that is based on the read voltage level.