Invention Grant
- Patent Title: Nonvolatile memory device and operation method thereof
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Application No.: US15981443Application Date: 2018-05-16
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Publication No.: US10761969B2Publication Date: 2020-09-01
- Inventor: Bong-Kil Jung , Hyunggon Kim , Donghoon Jeong , Myung-Hoon Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@17e35c4f
- Main IPC: G06F11/36
- IPC: G06F11/36 ; G06F3/06 ; G06F12/02

Abstract:
An operation method of a nonvolatile memory device includes receiving control signals and a data signal from external of the nonvolatile memory device, generating debugging information based on the control signals and the data signal, receiving a debugging information request from external of the nonvolatile memory device, and outputting the debugging information in response to the debugging information request.
Public/Granted literature
- US20190121720A1 NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2019-04-25
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