Invention Grant
- Patent Title: Delay circuit and write and read latency control circuit of memory, and signal delay method thereof
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Application No.: US16203591Application Date: 2018-11-28
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Publication No.: US10762008B2Publication Date: 2020-09-01
- Inventor: Jung-Hyun Kwon , Do-Sun Hong , Won-Gyu Shin , Seung-Gyu Jeong
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Perkins Coie LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5b974035
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G06F3/06

Abstract:
A memory module includes a first memory device that includes first circuit nodes for communication with a memory controller and second circuit nodes for communication inside the memory module, a second memory device that includes first circuit nodes for communication with the memory controller and second circuit nodes for communication inside the memory module, and an internal data bus that couples the first memory device to the second memory device to carry data between the second circuit nodes of the first memory device and the second circuit nodes of the second memory device. When an internal read command is applied to the first memory device and an internal write command is applied to the second memory device, data is transferred from the first memory device to the second memory device through the internal data bus.
Public/Granted literature
- US20190188162A1 MEMORY MODULE AND OPERATION METHOD OF THE SAME Public/Granted day:2019-06-20
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