Invention Grant
- Patent Title: Leakage pathway prevention in a memory storage device
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Application No.: US16263904Application Date: 2019-01-31
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Publication No.: US10762934B2Publication Date: 2020-09-01
- Inventor: Shang-Chi Wu , Cheng Hung Lee , Chien-Kuo Su , Chiting Cheng , Yu-Hao Hsu , Yangsyu Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/10 ; G11C7/12

Abstract:
The present disclosure describes various exemplary memory storage devices that can be programmed to write electronic data into one or more memory cells in a write mode of operation and/or to read the electronic data from the one or more memory cells in a read mode of operation. The various exemplary memory storage devices can select various control lines to read the electronic data from the one or more memory cells onto data lines and/or to write the electronic data from these data lines into the one or more memory cells. In some situations, these data lines are charged, also referred to as pre-charged, to a first logical value, such as a logical one, before the various exemplary memory storage devices write the electronic data into the one or more memory cells. During this pre-charging of these data lines, the various exemplary memory storage devices electrically isolate these data lines from specialized circuitry within these exemplary memory storage devices. This specialized circuitry, also referred to as a write driver, writes the electronic data onto these data lines for storage in the one or more memory cells during the write mode of operation.
Public/Granted literature
- US20200005835A1 LEAKAGE PATHWAY PREVENTION IN A MEMORY STORAGE DEVICE Public/Granted day:2020-01-02
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