Invention Grant
- Patent Title: Semiconductor device structure having semiconductor die bonded to redistribution layer via electrical pad with barrier layer
-
Application No.: US16162346Application Date: 2018-10-16
-
Publication No.: US10763234B2Publication Date: 2020-09-01
- Inventor: Ming Hsien Chu , Chi-Yu Wang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICOMDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICOMDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L25/065 ; H01L21/56 ; H01L23/498 ; H01L23/538
Abstract:
A wiring structure includes a redistribution layer and an electrical pad. The redistribution layer includes a passivation layer and a metal layer. The metal layer is embedded in the passivation layer, and the passivation layer defines an opening to expose a portion of the metal layer. The electrical pad is disposed in the opening of the passivation layer and on the metal layer. The electrical pad includes a seed layer, a conductive layer, a barrier layer and an anti-oxidation layer.
Public/Granted literature
- US20200118936A1 WIRING STRUCTURE, SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2020-04-16
Information query
IPC分类:
