公开(公告)号：US11784152B2

公开(公告)日：2023-10-10

申请号：US17347215

申请日：2021-06-14

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming Hsien Chu ,  Chi-Yu Wang

IPC: H01L29/40 ,  H01L23/48 ,  H01L23/52 ,  H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H01L23/66 ,  H01L21/683 ,  H01L21/56 ,  H01L21/48

CPC classification number: H01L24/20 ,  H01L21/4857 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/66 ,  H01L24/19 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2223/6677 ,  H01L2224/211 ,  H01L2224/221 ,  H01L2924/3511

Abstract: A semiconductor device package includes a first electronic device and a second electronic device. The first electronic device includes a first redistribution layer (RDL) including a circuit layer. The second electronic device is disposed on the first RDL of the first electronic device. The second electronic device includes an encapsulant and a patterned conductive layer. The encapsulant has a first surface facing the first RDL of the first electronic device, and a second surface opposite to the first surface. The patterned conductive layer is disposed at the second surface of the encapsulant, and is configured to be electrically coupled to the circuit layer of the first RDL of the first electronic device.

公开(公告)号：US11101237B2

公开(公告)日：2021-08-24

申请号：US17009594

申请日：2020-09-01

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming Hsien Chu ,  Chi-Yu Wang

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L23/31 ,  H01L25/065 ,  H01L21/56

Abstract: A wiring structure includes a redistribution layer and an electrical pad. The redistribution layer includes a passivation layer and a metal layer. The metal layer is embedded in the passivation layer, and the passivation layer defines an opening to expose a portion of the metal layer. The electrical pad is disposed in the opening of the passivation layer and on the metal layer. The electrical pad includes a seed layer, a conductive layer, a barrier layer and an anti-oxidation layer.

公开(公告)号：US11037898B2

公开(公告)日：2021-06-15

申请号：US16358616

申请日：2019-03-19

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming Hsien Chu ,  Chi-Yu Wang

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H01L23/66 ,  H01L21/683 ,  H01L21/56 ,  H01L21/48

Abstract: A semiconductor device package includes a first electronic device and a second electronic device. The first electronic device includes a first redistribution layer (RDL) including a circuit layer. The second electronic device is disposed on the first RDL of the first electronic device. The second electronic device includes an encapsulant and a patterned conductive layer. The encapsulant has a first surface facing the first RDL of the first electronic device, and a second surface opposite to the first surface. The patterned conductive layer is disposed at the second surface of the encapsulant, and is configured to be electrically coupled to the circuit layer of the first RDL of the first electronic device.

公开(公告)号：US10763234B2

公开(公告)日：2020-09-01

申请号：US16162346

申请日：2018-10-16

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming Hsien Chu ,  Chi-Yu Wang

IPC: H01L23/00 ,  H01L23/31 ,  H01L25/065 ,  H01L21/56 ,  H01L23/498 ,  H01L23/538

Abstract: A wiring structure includes a redistribution layer and an electrical pad. The redistribution layer includes a passivation layer and a metal layer. The metal layer is embedded in the passivation layer, and the passivation layer defines an opening to expose a portion of the metal layer. The electrical pad is disposed in the opening of the passivation layer and on the metal layer. The electrical pad includes a seed layer, a conductive layer, a barrier layer and an anti-oxidation layer.