Invention Grant
- Patent Title: Memory structure with multi-cell poly pitch
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Application No.: US16244047Application Date: 2019-01-09
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Publication No.: US10763267B2Publication Date: 2020-09-01
- Inventor: Yew Keong Chong , Sriram Thyagarajan , Munish Kumar
- Applicant: Arm Limited
- Applicant Address: GB Cambridge
- Assignee: Arm Limited
- Current Assignee: Arm Limited
- Current Assignee Address: GB Cambridge
- Agency: Pramudji Law Group PLLC
- Agent Ari Pramudji
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L27/02 ; G11C11/419 ; H01L23/528 ; G11C11/418

Abstract:
Various implementations described herein refer to an integrated circuit having a memory structure with a two-bitcell layout and a four cell poly pitch. The two-bitcell layout includes a first bitcell and a second bitcell with structural contours that are joined together in a coupling arrangement. The first bitcell and the second bitcell have multiple transistors that are arranged to store data during write operations and allow access of data during read operations.
Public/Granted literature
- US20200219890A1 Memory Structure with Multi-Cell Poly Pitch Public/Granted day:2020-07-09
Information query
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