Invention Grant
- Patent Title: Semiconductor device with dual and single gate structure transistors
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Application No.: US16180565Application Date: 2018-11-05
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Publication No.: US10763372B2Publication Date: 2020-09-01
- Inventor: Hidekazu Miyairi , Takeshi Osada , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@482f36e8
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L21/477 ; H01L29/24 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L21/02 ; H01L21/4763 ; H01L29/45
Abstract:
As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.
Public/Granted literature
- US20190074379A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-03-07
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