发明授权
- 专利标题: Devices with organic semiconductor layers electrically-doped over a controlled depth
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申请号: US15735549申请日: 2016-06-03
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公开(公告)号: US10763447B2公开(公告)日: 2020-09-01
- 发明人: Bernard Kippelen , Naoya Aizawa , Canek Fuentes-Hernandez , Junji Kido , Seth Marder , Felipe A. Larrain , Wen-Fang Chou , Vladimir Kolesov
- 申请人: Georgia Tech Research Corporation
- 申请人地址: US GA Atlanta
- 专利权人: Georgia Tech Research Corporation
- 当前专利权人: Georgia Tech Research Corporation
- 当前专利权人地址: US GA Atlanta
- 代理机构: Troutman Pepper Hamilton Sanders LLP
- 代理商 Ryan A. Schneider
- 国际申请: PCT/US2016/035790 WO 20160603
- 国际公布: WO2017/007554 WO 20170112
- 主分类号: H01L51/44
- IPC分类号: H01L51/44 ; H01L51/00 ; H01L51/42
摘要:
The disclosed technology includes systems, devices, and methods associate with producing an organic semiconductor film having electrical dopant molecules distributed to a controlled depth. In an example implementation, a semiconductor device is provided. The semiconductor device can include a first substrate and an organic semiconductor film disposed on the first substrate. The organic semiconductor film includes a first region characterized by electrical dopant molecules distributed to a controlled depth with respect to a first surface of the organic semiconductor film. The semiconductor device further can include an electrode in contact with at least a portion of the first region of the organic semiconductor film.
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