- 专利标题： Semiconductor structure and method for fabricating the same
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申请号： US16235013申请日： 2018-12-28
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公开(公告)号： US10770396B2公开(公告)日： 2020-09-08
- 发明人: Fang-Ming Lee , Sheng-Wei Fu , Chung-Yeh Lee
- 申请人： Vanguard International Semiconductor Corporation
- 申请人地址： TW Hsinchu
- 专利权人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/768 ; H01L23/535 ; H01L29/66
摘要：
A semiconductor structure includes a substrate, an epitaxial layer disposed on the substrate, a conductive feature disposed in the epitaxial layer having a protruding portion that is higher than the epitaxial layer, and a diffusion barrier layer disposed on sidewalls of the conductive feature.
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