公开(公告)号：US20230420529A1

公开(公告)日：2023-12-28

申请号：US17849689

申请日：2022-06-26

申请人： Vanguard International Semiconductor Corporation

发明人： Po-Hsiang Liao ,  Sheng-Wei Fu ,  Chung-Yeh Lee

IPC分类号： H01L29/423 ,  H01L29/40 ,  H01L29/78 ,  H01L21/768

CPC分类号： H01L29/4236 ,  H01L29/407 ,  H01L29/401 ,  H01L21/76897 ,  H01L29/7813

摘要： A semiconductor device includes a substrate, a body region on the substrate, a source region on the body region, a first trench electrode passing through the source region, the body region and a portion of the substrate, a first dielectric cap layer, a first dielectric liner and a conductive layer. The first dielectric cap layer includes a first dielectric portion directly above the first trench electrode and first dielectric spacers on two opposite sides of the first dielectric portion. The first dielectric liner surrounds the first trench electrode and the first dielectric portion. The conductive layer covers the first dielectric cap layer and includes an electrode contact. The electrode contact includes a first portion in the body region and a second portion adjacent to one of the first dielectric spacers, where the first and second portions have the same width.

公开(公告)号：US10600906B1

公开(公告)日：2020-03-24

申请号：US16676755

申请日：2019-11-07

申请人： VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION

发明人： Chung-Yen Chien ,  Sheng-Wei Fu ,  Chung-Yeh Lee

IPC分类号： H01L21/00 ,  H01L29/78 ,  H01L29/66 ,  H01L29/40 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/765

摘要： A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

公开(公告)号：US11081560B2

公开(公告)日：2021-08-03

申请号：US16800272

申请日：2020-02-25

申请人： Vanguard International Semiconductor Corporation

发明人： Tsung-Yeh Chen ,  Sheng-Wei Fu ,  Chung-Yeh Lee

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/40 ,  H01L29/78

摘要： A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.

公开(公告)号：US10770396B2

公开(公告)日：2020-09-08

申请号：US16235013

申请日：2018-12-28

申请人： Vanguard International Semiconductor Corporation

发明人： Fang-Ming Lee ,  Sheng-Wei Fu ,  Chung-Yeh Lee

IPC分类号： H01L29/78 ,  H01L21/768 ,  H01L23/535 ,  H01L29/66

摘要： A semiconductor structure includes a substrate, an epitaxial layer disposed on the substrate, a conductive feature disposed in the epitaxial layer having a protruding portion that is higher than the epitaxial layer, and a diffusion barrier layer disposed on sidewalls of the conductive feature.

公开(公告)号：US10510878B1

公开(公告)日：2019-12-17

申请号：US16007169

申请日：2018-06-13

申请人： Vanguard International Semiconductor Corporation

发明人： Chung-Yen Chien ,  Sheng-Wei Fu ,  Chung-Yeh Lee

IPC分类号： H01L21/00 ,  H01L29/78 ,  H01L29/40 ,  H01L21/321 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/765

摘要： A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.