• Patent Title: Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor-on-insulator type
  • Application No.: US16081816
    Application Date: 2017-03-02
  • Publication No.: US10777447B2
    Publication Date: 2020-09-15
  • Inventor: Ludovic EcarnotNadia Ben MohammedCarine Duret
  • Applicant: Soitec
  • Applicant Address: FR Bernin
  • Assignee: Soitec
  • Current Assignee: Soitec
  • Current Assignee Address: FR Bernin
  • Agency: TraskBritt
  • Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5308d9e3
  • International Application: PCT/FR2017/050471 WO 20170302
  • International Announcement: WO2017/149253 WO 20170908
  • Main IPC: H01L21/762
  • IPC: H01L21/762 H01L21/66 H01L21/02 H01L21/20 H01L21/84
Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor-on-insulator type
Abstract:
A method for determining a suitable implanting energy of at least two atomic species in a donor substrate to create a weakened zone defining a monocrystalline semiconductor layer to be transferred onto a receiver substrate, comprises the following steps:(i) forming a dielectric layer on at least one of the donor substrate and the receiver substrate;(ii) co-implanting the species in the donor substrate;(iii) bonding the donor substrate on the receiver substrate;(iv) detaching the donor substrate along the weakened zone to transfer the monocrystalline semiconductor layer and recover the remainder of the donor substrate;(v) inspecting the peripheral crown of the remainder of the donor substrate, or of the receiver substrate on which the monocrystalline semiconductor layer was transferred at step (iv);(vi) if the crown exhibits zones transferred onto the receiver substrate, determining the fact that the implanting energy at step (ii) is too high;(vii) if said the crown does not exhibit zones transferred onto the receiver substrate, determining the fact that the implanting energy at step (ii) is suitable.
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