Invention Grant
- Patent Title: Formation of epi source/drain material on transistor devices and the resulting structures
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Application No.: US16247761Application Date: 2019-01-15
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Publication No.: US10777463B2Publication Date: 2020-09-15
- Inventor: Man Gu , Tao Han
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L27/092 ; H01L29/417 ; H01L21/8238 ; H01L29/78 ; H01L29/66
Abstract:
One illustrative device disclosed herein includes an epi cavity formed in a semiconductor substrate adjacent a gate structure of a transistor and an epi semiconductor material comprising first and second portions. The first portion of the epi semiconductor material is positioned within the epi cavity. The second portion of the epi semiconductor material is positioned above the first portion of the epi semiconductor material and above a level corresponding to a level of an upper surface of the semiconductor substrate. The first portion of the epi semiconductor material has a first dimension in a direction corresponding to a gate length direction of the transistor and the second portion of the epi semiconductor material has a second dimension in a direction corresponding to the gate length direction of the transistor, wherein the first dimension is greater than the second dimension.
Public/Granted literature
- US20200227320A1 FORMATION OF EPI SOURCE/DRAIN MATERIAL ON TRANSISTOR DEVICES AND THE RESULTING STRUCTURES Public/Granted day:2020-07-16
Information query
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