The disclosed technology generally relates to semiconductor characterization, and more particularly to detecting manufacturing defects in semiconductor regions. In one aspect, a non-destructive method of detecting a manufacturing defect in a semiconductor device includes providing a semiconductor device comprising an electrically isolated conductive via formed in a semiconductor region. The method additionally includes locally heating to cause a temperature change in a volume of the semiconductor region from a first temperature to a second temperature. The method additionally includes applying an electrical bias between the conductive via and the semiconductor region to form a temperature-dependent depletion region in the semiconductor region. The method additionally includes measuring a first capacitance value and a second capacitance value between the conductive via and the semiconductor region corresponding to the first temperature and the second temperature, respectively, of the volume of the semiconductor region. The method further includes detecting the manufacturing defect based on a difference between the first capacitance value and the second capacitance value.