Invention Grant
- Patent Title: Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device
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Application No.: US16577316Application Date: 2019-09-20
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Publication No.: US10777506B2Publication Date: 2020-09-15
- Inventor: Frank Hille , Ravi Keshav Joshi , Michael Fugger , Oliver Humbel , Thomas Laska , Matthias Müller , Roman Roth , Carsten Schaeffer , Hans-Joachim Schulze , Holger Schulze , Juergen Steinbrenner , Frank Umbach
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@779098b1
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/485 ; H01L21/768 ; H01L23/522 ; H01L23/528
Abstract:
According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.
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