Invention Grant
- Patent Title: Resonance avalanche photodiodes for dynamic biasing
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Application No.: US16160272Application Date: 2018-10-15
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Publication No.: US10777698B2Publication Date: 2020-09-15
- Inventor: Majeed M. Hayat , Payman Zarkesh-Ha
- Applicant: STC.UNM
- Applicant Address: US NM Albuquerque
- Assignee: STC.UNM
- Current Assignee: STC.UNM
- Current Assignee Address: US NM Albuquerque
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H03F1/08
- IPC: H03F1/08 ; H01L31/107 ; H01L25/16 ; H03F3/08 ; H03F3/45 ; H03F1/02

Abstract:
Systems and methods implementing a resonance circuit, including an avalanche photodiode, in which a resonance frequency of the resonance circuit is matched with the frequency of a dynamic biasing signal of the avalanche photodiode, can be used in a variety of applications. In various embodiments, a method for blocking and/or compensating current injection associated with the parasitic capacitance of APDs operated under dynamic biasing may be substantially realized by the matching of the resonance frequency of a resonance circuit including the avalanche photodiode with the frequency of an applied dynamic biasing signal. Additional systems and methods are described that can be used in a variety of applications.
Public/Granted literature
- US20190051783A1 RESONANCE AVALANCHE PHOTODIODES FOR DYNAMIC BIASING Public/Granted day:2019-02-14
Information query
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