- 专利标题: Switching element, variable resistance memory device, and method of manufacturing the switching element
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申请号: US16364232申请日: 2019-03-26
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公开(公告)号: US10777745B2公开(公告)日: 2020-09-15
- 发明人: Seung-Geun Yu , Zhu Wu , Ja Bin Lee , Jung Moo Lee , Jinwoo Lee , Kyubong Jung
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine, Whitt & Francos, PLLC
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4bcf99b2
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L27/24
摘要:
A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.
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