Invention Grant
- Patent Title: Extreme ultraviolet photolithography system and method
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Application No.: US16249046Application Date: 2019-01-16
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Publication No.: US10779387B2Publication Date: 2020-09-15
- Inventor: Ming-Hsun Tsai , Han-Lung Chang , Yen-Hsun Chen , Shao-Hua Wang , Li-Jui Chen , Po-Chung Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H05G2/00

Abstract:
A method of operating an extreme ultraviolet (EUV) lithography system includes directing a metallic droplet along a shroud, wherein the shroud has a first opening adjacent a droplet generator and a second opening adjacent an excitation region; partially shielding the second opening of the shroud; and emitting a laser beam encountering the metallic droplet to generate an EUV light.
Public/Granted literature
- US20200166848A1 EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY SYSTEM AND METHOD Public/Granted day:2020-05-28
Information query
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