- 专利标题： Apparatuses and methods including memory access in cross point memory
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申请号： US16399144申请日： 2019-04-30
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公开(公告)号： US10783965B2公开(公告)日： 2020-09-22
- 发明人: DerChang Kau , Gianpaolo Spadini
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman Lundberg & Woessner, P.A.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C13/00 ; G11C16/08 ; G11C16/24 ; H01L45/00 ; H01L27/24 ; H01L23/528
摘要：
Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
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