Invention Grant
- Patent Title: IC with thin film resistor with metal walls
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Application No.: US16047889Application Date: 2018-07-27
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Publication No.: US10784193B2Publication Date: 2020-09-22
- Inventor: Qi-Zhong Hong , Honglin Guo , Benjamin James Timmer , Gregory Boyd Shinn
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/522 ; H01L49/02

Abstract:
An integrated circuit (IC) includes a substrate having a semiconductor surface layer with functional circuitry for realizing at least one circuit function, with an inter level dielectric (ILD) layer on a metal layer that is above the semiconductor surface layer. A thin film resistor (TFR) including a TFR layer is on the ILD layer. At least one vertical metal wall is on at least two sides of the TFR. The metal walls include at least 2 metal levels coupled by filled vias. The functional circuitry is outside the metal walls.
Public/Granted literature
- US20200035598A1 IC WITH THIN FILM RESISTOR WITH METAL WALLS Public/Granted day:2020-01-30
Information query
IPC分类: