Invention Grant
- Patent Title: High pass filter
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Application No.: US16180495Application Date: 2018-11-05
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Publication No.: US10784839B2Publication Date: 2020-09-22
- Inventor: Jeong Hae Kim , Seong Jong Cheon , Hyung Jin Lee
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4d1bdd36
- Main IPC: H03H9/54
- IPC: H03H9/54 ; H03H7/01 ; H03H9/60

Abstract:
A high pass filter includes: a first resonant circuit including an inductor and a capacitor in parallel between first and second terminals; a second resonant circuit including an inductor and a capacitor in series between a first end of the first resonant circuit and a ground; a third resonant circuit including an inductor and a capacitor in series between a second end of the first resonant circuit and the ground; a fourth resonant circuit disposed between the first end of the first resonant circuit and the first terminal, and including a first acoustic resonator; and a fifth resonant circuit disposed between the second end of the first resonant circuit and the second terminal, and including a second acoustic resonator. Attenuation regions respectively formed by the first, second, and third resonant circuits are arranged in lower frequency regions than attenuation regions respectively formed by the fourth and fifth resonant circuits.
Public/Granted literature
- US20190326883A1 HIGH PASS FILTER Public/Granted day:2019-10-24
Information query
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