Invention Grant
- Patent Title: Heat radiation device, semiconductor package comprising the same, and semiconductor device comprising the same
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Application No.: US16139526Application Date: 2018-09-24
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Publication No.: US10790213B2Publication Date: 2020-09-29
- Inventor: Jae Choon Kim , Young-Deuk Kim , Younghoon Hyun
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@48d033ce
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L29/41 ; H01L23/00
Abstract:
A heat radiation device includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A second electrode is disposed on the semiconductor substrate and is spaced apart from the first electrode. A first through electrode is disposed in the semiconductor substrate. The first through electrode is electrically connected to the first electrode.
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