A system, a control method and an apparatus for chemical mechanical polishing (CMP) are introduced in the present application. The CMP apparatus may include a polishing pad, a first sensor, a polishing head and a condition. The polishing pad has a plurality of groves arranged randomly or in a specific pattern. The first sensor is configured to measure the pad profile of the polishing pad, where the pad profile includes the depth of each of the grooves on the polishing pad. The polishing head and the conditioner are operated according to at least one polishing condition, and the at least one polishing condition is tuned according to the pad profile.