Invention Grant
- Patent Title: Etching composition and method for fabricating semiconductor device by using the same
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Application No.: US16543999Application Date: 2019-08-19
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Publication No.: US10793775B2Publication Date: 2020-10-06
- Inventor: Soo Jin Kim , Hyo Sun Lee , Jin Hye Bae , Jung Hun Lim , Yong Jae Choi
- Applicant: Samsung Electronics Co., Ltd. , Soulbrain Co., Ltd.
- Applicant Address: KR Gyeonggi-do KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.,Soulbrain Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.,Soulbrain Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4a9191bf
- Main IPC: C09K13/08
- IPC: C09K13/08 ; H01L21/306 ; H01L21/3213 ; B82Y10/00 ; C09K13/00 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/78 ; H01L29/786
Abstract:
An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
Public/Granted literature
- US20190390111A1 ETCHING COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME Public/Granted day:2019-12-26
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