Invention Grant
- Patent Title: Method of manufacturing integrated circuit device
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Application No.: US16165567Application Date: 2018-10-19
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Publication No.: US10795262B2Publication Date: 2020-10-06
- Inventor: Jin Park , Sang Ki Nam , Kyu-hee Han , Jin-ok Kim , Jin-hong Park , Gwang-we Yoo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do KR Suwon, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,Research & Business Foundation SUNGYUNKWAN UNIVERSITY
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,Research & Business Foundation SUNGYUNKWAN UNIVERSITY
- Current Assignee Address: KR Suwon-si, Gyeonggi-do KR Suwon, Gyeonggi-do
- Agency: Lee IP Law, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@bf973d0
- Main IPC: G03F7/11
- IPC: G03F7/11 ; H01L21/027 ; G03F7/16 ; G03F7/32 ; G03F7/20 ; G03F7/38

Abstract:
A method of manufacturing an integrated circuit (IC) device includes exposing a partial region of a photoresist film formed on a main surface of a substrate to generate acid, and diffusing the acid in the partial region of the photoresist film. Diffusing the acid may include applying an electric field, in a direction perpendicular to a direction in which the main surface of the substrate extends, to the photoresist film using an electrode facing the substrate through an electric-field transmission layer filling between the photoresist film and the electrode. The electric-field transmission layer may include an ion-containing layer or a conductive polymer layer.
Public/Granted literature
- US20190287792A1 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE Public/Granted day:2019-09-19
Information query
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