公开(公告)号：US10795262B2

公开(公告)日：2020-10-06

申请号：US16165567

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Park ,  Sang Ki Nam ,  Kyu-hee Han ,  Jin-ok Kim ,  Jin-hong Park ,  Gwang-we Yoo

IPC: G03F7/11 ,  H01L21/027 ,  G03F7/16 ,  G03F7/32 ,  G03F7/20 ,  G03F7/38

Abstract: A method of manufacturing an integrated circuit (IC) device includes exposing a partial region of a photoresist film formed on a main surface of a substrate to generate acid, and diffusing the acid in the partial region of the photoresist film. Diffusing the acid may include applying an electric field, in a direction perpendicular to a direction in which the main surface of the substrate extends, to the photoresist film using an electrode facing the substrate through an electric-field transmission layer filling between the photoresist film and the electrode. The electric-field transmission layer may include an ion-containing layer or a conductive polymer layer.