Invention Grant
- Patent Title: Photomask laser etch
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Application No.: US16510855Application Date: 2019-07-12
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Publication No.: US10802392B2Publication Date: 2020-10-13
- Inventor: Banqiu Wu , Eli Dagan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F1/54 ; G03F1/46 ; G03F1/80

Abstract:
Embodiments described herein relate to apparatus and methods for removing one or more films from a photomask to create a black border and one or more pellicle anchor areas thereon. A photomask substrate is exposed by removing the one or more films in the black border and pellicle anchor areas. The black border prevents a pattern on the photomask from overlapping a pattern on a substrate being processed. To create the black border and pellicle anchor areas, a laser beam is projected through a lens and focused on a surface of the films. The films are ablated by the laser beam without damaging the photomask substrate.
Public/Granted literature
- US20200057362A1 PHOTOMASK LASER ETCH Public/Granted day:2020-02-20
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