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公开(公告)号：US11467508B2
公开(公告)日：2022-10-11
申请号：US16448722
申请日：2019-06-21
Applicant: Applied Materials, Inc.
Abstract: Embodiments of the present disclosure generally include apparatus and methods for removing adhesive residues from a surface of a lithography mask. In particular, the processing systems described herein provide for the delivery of a solvent to a discrete plurality of locations on the surface of the lithography mask to facilitate the removal of adhesive residue therefrom. In one embodiment, a method of processing a substrate includes positioning the substrate on a substrate support of a processing system, sealing individual ones of a plurality of cleaning units to a surface of the substrate at a corresponding plurality of locations, heating a cleaning fluid to a temperature between about 50° C. and about 150° C., flowing the cleaning fluid to, and thereafter, from, the plurality of cleaning units, and exposing the surface of the substrate to the cleaning fluid at the plurality of locations.
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公开(公告)号：US11054746B2
公开(公告)日：2021-07-06
申请号：US16557466
申请日：2019-08-30
Applicant: Applied Materials, Inc.
Abstract: Generally, examples described herein relate to systems and methods for processing a substrate, and more particularly, for removing an edge bead or other source of contamination from an edge of a substrate. An example is a processing system including a chamber, a substrate handler within the chamber, and a radiation generator within the chamber. The substrate handler is configured to secure a substrate. The substrate handler is operable to position an edge surface of the substrate such that radiation propagating from the radiation generator is directed to the edge surface of the substrate, and operable to position a periphery region of a deposit surface of the substrate that is perpendicular to and along the edge surface such that radiation propagating from the radiation generator is directed to the periphery region.
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公开(公告)号：US10962889B2
公开(公告)日：2021-03-30
申请号：US16685164
申请日：2019-11-15
Applicant: Applied Materials, Inc.
Inventor： Banqiu Wu , Eli Dagan , Khalid Makhamreh , Bruce J. Fender
Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for preparing a photomask for a lithography process. In one embodiment, a curing chamber is disclosed that includes an elevator adapted to receive a plurality of holder units. Each of the holder units comprise a holder, a clamp holding a photomask, one or more studs coupled to the photomask by an adhesive, and a spring coupled to each of the one or more studs.
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公开(公告)号：US10928724B2
公开(公告)日：2021-02-23
申请号：US16661541
申请日：2019-10-23
Applicant: Applied Materials, Inc.
Inventor： Banqiu Wu , Eli Dagan , Khalid Makhamreh , Bruce J. Fender
Abstract: Embodiments of the present disclosure generally provide apparatus and methods for removing an attachment feature utilized to hold a pellicle from a photomask. In one embodiment, an attachment feature removal apparatus for processing a photomask includes an attachment feature puller comprising an actuator, a clamp coupled to the actuator, the clamp adapted to grip an attachment feature, and a coil assembly disposed adjacent to the attachment feature.
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公开(公告)号：US11114350B2
公开(公告)日：2021-09-07
申请号：US16453773
申请日：2019-06-26
Applicant: Applied Materials, Inc.
Inventor： Banqiu Wu , Khalid Makhamreh , Eli Dagan
IPC: H01L21/02 , H01L21/66 , H01L21/311
Abstract: Methods and apparatus for removing a photoresist layer from a photomask substrate are provided. In one example, a method for removing a photoresist layer from a substrate in a chamber includes generating a first plasma including first radicals from a first gas mixture in a processing chamber, exposing a portion of a photoresist layer on a substrate to the first radicals to remove the portion of the photoresist layer from the substrate, generating a second plasma including second radicals from a second gas mixture, wherein the second radicals have a different composition than the first radicals, and exposing another portion of photoresist layer to the second radicals to remove the second portion of the photoresist layer.
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Patent Agency Ranking
公开(公告)号：US10933624B2
公开(公告)日：2021-03-02
申请号：US16885469
申请日：2020-05-28
Applicant: Applied Materials, Inc.
IPC: B41C1/10 , H01L21/027 , G03F7/20
Abstract: Embodiments described herein generally relate to an apparatus and methods for removing a glue residue from a photomask. The glue residue may be exposed when a pellicle is removed from the photomask. Before a new pellicle can be adhered to the photomask, the glue residue may be removed. To remove the glue residue, a laser beam may be projected through a lens and focused on a surface of the glue residue. The glue residue may be ablated from the photomask by the laser beam.
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公开(公告)号：US10802392B2
公开(公告)日：2020-10-13
申请号：US16510855
申请日：2019-07-12
Applicant: Applied Materials, Inc.
Abstract: Embodiments described herein relate to apparatus and methods for removing one or more films from a photomask to create a black border and one or more pellicle anchor areas thereon. A photomask substrate is exposed by removing the one or more films in the black border and pellicle anchor areas. The black border prevents a pattern on the photomask from overlapping a pattern on a substrate being processed. To create the black border and pellicle anchor areas, a laser beam is projected through a lens and focused on a surface of the films. The films are ablated by the laser beam without damaging the photomask substrate.
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公开(公告)号：US11964068B2
公开(公告)日：2024-04-23
申请号：US17200408
申请日：2021-03-12
Applicant: Applied Materials, Inc.
CPC classification number: A61L2/202 , A61L2/10 , A61L2202/11 , A61L2202/122
Abstract: Embodiments of the present disclosure relate to an oxygen cleaning chamber with UV radiation generator temperature control and a method of atomic oxygen cleaning a substrate. The atomic oxygen cleaning chamber includes a process chamber and a cooling chamber coupled to the process chamber and a divider sealingly separating the process chamber from the cooling chamber. An ultraviolet (UV) radiation generator is disposed in the cooling chamber and provides UV radiation through the divider into the process chamber. A gas distribution assembly distributes ozone over an upper surface of a pedestal in the process chamber and a coolant distribution assembly distributes cooling gas into the cooling chamber to cool the UV radiation generator. By actively cooling the UV radiation generator, a higher intensity UV radiation at a stable wavelength is produced, i.e., without wavelength drift normally associated with high power UV radiation generator outputs.
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公开(公告)号：US11908679B2
公开(公告)日：2024-02-20
申请号：US16556562
申请日：2019-08-30
Applicant: Applied Materials, Inc.
CPC classification number: H01L21/02057 , B08B7/00 , H01L21/67028 , H01L21/67115
Abstract: Embodiments described herein relate to oxygen cleaning chambers and a method of atomic oxygen cleaning a substrate. The oxygen cleaning chambers and method of atomic oxygen cleaning a substrate provide for generation of atomic oxygen in situ to oxidize materials on the surfaces of the substrate. The atomic oxygen cleaning chamber includes a chamber body, a chamber lid, a processing volume defined by the chamber body and the chamber lid, an UV radiation generator including one or more UV radiation sources, a pedestal disposed in the processing volume, and a gas distribution assembly. The pedestal has a processing position corresponding to a distance from the UV radiation generator to an upper surface of the pedestal. The gas distribution assembly is configured to be connected to an ozone generator to distribute ozone over the upper surface of the pedestal.
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公开(公告)号：US10710358B2
公开(公告)日：2020-07-14
申请号：US16443341
申请日：2019-06-17
Applicant: Applied Materials, Inc.
IPC: H01L21/027 , G03F7/20 , B41C1/10
Abstract: Embodiments described herein generally relate to an apparatus and methods for removing a glue residue from a photomask. The glue residue may be exposed when a pellicle is removed from the photomask. Before a new pellicle can be adhered to the photomask, the glue residue may be removed. To remove the glue residue, a laser beam may be projected through a lens and focused on a surface of the glue residue. The glue residue may be ablated from the photomask by the laser beam.
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