Invention Grant
- Patent Title: Method of manufacturing semiconductor device and semiconductor device
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Application No.: US15657132Application Date: 2017-07-22
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Publication No.: US10818581B2Publication Date: 2020-10-27
- Inventor: Toshiyuki Hata , Yuichi Yato
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: SGPatents PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@39f1f0cb
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L25/00 ; H01L21/48 ; H01L23/00 ; H01L23/31

Abstract:
An improvement is achieved in the performance of a semiconductor device. A second component mounting portion over which a first electronic component is mounted is connected to a coupling portion of a lead frame via a suspension lead. The suspension lead has a first portion between the second component mounting portion and the coupling portion and a second portion between the first portion and the coupling portion. The second portion has a third portion connected to the first portion and having a width smaller than a width of the first portion, a fourth portion connected to the first portion and having a width smaller than the width of the first portion, and a through hole (opening) located between the third and fourth portions. Each of the first, third, and fourth portions has the same thickness. After a sealing body is formed, a cutting jig is pressed against the suspension lead to cut the suspension lead.
Public/Granted literature
- US20180090420A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2018-03-29
Information query
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