- 专利标题： Semiconductor memory device
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申请号： US16569951申请日： 2019-09-13
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公开(公告)号： US10818691B2公开(公告)日： 2020-10-27
- 发明人: Toshifumi Minami , Atsuhiro Sato , Keisuke Yonehama , Yasuyuki Baba , Hiroshi Shinohara , Hideyuki Kamata , Teppei Higashitsuji
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Tokyo
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Kim & Stewart LLP
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2ee302cf
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/1157 ; H01L27/11578 ; H01L29/792 ; H01L27/11563 ; H01L27/11556 ; H01L27/11565 ; H01L27/11551
摘要：
A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.
公开/授权文献
- US20200006382A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2020-01-02
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