- 专利标题: Ion implantation apparatus and measurement device
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申请号: US16270236申请日: 2019-02-07
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公开(公告)号: US10825654B2公开(公告)日: 2020-11-03
- 发明人: Noriyasu Ido , Hiroyuki Kariya , Masahide Ooura
- 申请人: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- 当前专利权人: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Michael Best & Friedrich LLP
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3bafbad8
- 主分类号: H01J37/317
- IPC分类号: H01J37/317 ; H01J37/304 ; H01J37/02 ; H01J37/244 ; H01J37/147
摘要:
A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.
公开/授权文献
- US20190244785A1 ION IMPLANTATION APPARATUS AND MEASUREMENT DEVICE 公开/授权日:2019-08-08
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