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公开(公告)号：US11603590B2
公开(公告)日：2023-03-14
申请号：US16987807
申请日：2020-08-07
发明人： Kazuhisa Ishibashi
IPC分类号： H01J37/302 , H01J37/317 , C23C14/48
摘要： An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.
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公开(公告)号：US11145488B2
公开(公告)日：2021-10-12
申请号：US16987799
申请日：2020-08-07
发明人： Kazuhisa Ishibashi
IPC分类号： H01J37/317 , H01J37/304
摘要： An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.
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公开(公告)号：US20210280388A1
公开(公告)日：2021-09-09
申请号：US17191218
申请日：2021-03-03
IPC分类号： H01J37/317 , H01J37/304
摘要： There is provided an ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure at least one physical quantity of the ion beam, and a control device that acquires a data set including a plurality of measurement values measured by the plurality of measurement devices, and evaluates measurement validity of the at least one physical quantity of the ion beam by using a model representing a correlation between the plurality of measurement values.
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公开(公告)号：US20210020403A1
公开(公告)日：2021-01-21
申请号：US16930036
申请日：2020-07-15
发明人： Hiroki Murooka
IPC分类号： H01J37/317 , H01J37/08
摘要： There is provided an ion generator including a vapor generating chamber for generating a vapor by heating a raw material in which a first solid material which is a single substance of an impurity element and a second solid material which is a compound containing the impurity element are mixed with each other, and a plasma generating chamber for generating a plasma containing ions of the impurity element by using the vapor.
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公开(公告)号：US10854418B2
公开(公告)日：2020-12-01
申请号：US16197523
申请日：2018-11-21
发明人： Haruka Sasaki
IPC分类号： H01J37/05 , H01J37/317 , H01J37/147 , H01J37/08 , H01J37/141 , H01J49/30
摘要： A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.
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公开(公告)号：US10672586B2
公开(公告)日：2020-06-02
申请号：US16270960
申请日：2019-02-08
发明人： Sho Kawatsu , Noriyasu Ido
IPC分类号： H01J37/147 , H01J37/317 , H01J37/20
摘要： A beamline device includes a deflection device deflecting an ion beam in a first direction perpendicular to a beam traveling direction by applying at least one of an electric field and a magnetic field to the ion beam. A slit is disposed such that the first direction coincides with a slit width direction. A beam current measurement device is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in the first direction. A control device calculates angle information in the first direction on the ion beam by acquiring a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction by the beam current measurement device while changing a deflection amount of the ion beam in the first direction with the deflection device.
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公开(公告)号：US10468283B2
公开(公告)日：2019-11-05
申请号：US15228754
申请日：2016-08-04
发明人： Tetsuya Kudo , Shinji Ebisu , Yoshito Fujii
IPC分类号： H01L21/67 , H01L21/677 , C23C14/48 , H01L21/68 , H01L21/687
摘要： A first conveyance mechanism and a second conveyance mechanism convey a pair of two wafers to an alignment device from a wafer container via a buffer device, and then bring the wafers respectively into a first load lock chamber and a second load lock chamber after alignment. An intermediate conveyance mechanism conveys one of the pair of two wafers between the first load lock chamber and a vacuum processing chamber. The intermediate conveyance mechanism conveys the other of the pair of two wafers between the second load lock chamber and the vacuum processing chamber. The first conveyance mechanism and the second conveyance mechanism take out the pair of two wafers subjected to an implantation process from the first load lock chamber and the second load lock chamber and store the wafers into the wafer container.
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公开(公告)号：US10395890B2
公开(公告)日：2019-08-27
申请号：US15862335
申请日：2018-01-04
发明人： Haruka Sasaki
IPC分类号： H01J37/317 , H05H15/00 , H01J37/05 , H05H7/00 , H05H9/04
摘要： An ion implantation apparatus includes: a multistage linear acceleration unit including a plurality of stages of high-frequency resonators and a plurality of stages of focusing lenses; a first beam measuring unit disposed in the middle of the multistage linear acceleration unit and configured to allow passage of a beam portion adjacent to a center of a beam trajectory and measure a current intensity of another beam portion blocked by an electrode body outside a vicinity of the center of the beam trajectory; a second beam measuring unit disposed downstream of the multistage linear acceleration unit and configured to measure a current intensity of an ion beam exiting from the multistage linear acceleration unit; and a control device configured to adjust a control parameter of the plurality of stages of focusing lenses based on measurement results of the first and second beam measuring units.
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公开(公告)号：US09984856B2
公开(公告)日：2018-05-29
申请号：US15280604
申请日：2016-09-29
发明人： Shiro Ninomiya , Yasuharu Okamoto , Akihiro Ochi , Yusuke Ueno
IPC分类号： A61N5/00 , H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01L21/26586
摘要： An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.
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公开(公告)号：US09984851B2
公开(公告)日：2018-05-29
申请号：US14463041
申请日：2014-08-19
发明人： Hiroyuki Kariya
IPC分类号： H01J37/317 , H01J37/147 , H01J37/24 , G01R33/07
CPC分类号： H01J37/243 , G01R33/07 , G01R33/072 , H01J37/05 , H01J37/147 , H01J37/3171 , H01J2237/055 , H01J2237/057 , H01J2237/152 , H01J2237/24514 , H01J2237/248 , H01J2237/3045
摘要： An ion implanter includes an energy analyzer electromagnet provided between an ion source and a processing chamber. The energy analyzer electromagnet includes a Hall probe configured to generate a measurement output in response to a deflecting magnetic field and an NMR probe configured to generate an NMR output. A control unit of the ion implanter includes a magnetic field measurement unit configured to measure the deflecting magnetic field in accordance with a known correspondence between the deflecting magnetic field and the measurement output, a magnetic field determination unit configured to determine the deflecting magnetic field from the NMR output, and a Hall probe calibration unit configured to update the known correspondence by using the deflecting magnetic field determined from the NMR output and a new measurement output of the Hall probe corresponding to the determined deflecting magnetic field.
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