Invention Grant
- Patent Title: MIM capacitor and method of manufacturing the same
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Application No.: US15939328Application Date: 2018-03-29
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Publication No.: US10825894B2Publication Date: 2020-11-03
- Inventor: Tung-Jiun Wu , Shun-Yi Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/311 ; H01L21/285 ; H01L21/768 ; H01L23/532 ; H01L21/02

Abstract:
Provided are MIM capacitor and method of manufacturing the same. The MIM capacitor includes a first electrode, a second electrode, a third electrode, a first insulating layer, a second insulating layer, and a first spacer. The first electrode and the third electrode are electrically connected to each other. The first insulating layer is between the first electrode and the second electrode. The second insulating layer is between the second electrode and the third electrode. The first spacer is located between a sidewall of the first electrode and the first insulating layer.
Public/Granted literature
- US20190305078A1 MIM CAPACITOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-10-03
Information query
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