- 专利标题： Atomic layer deposition of lead sulfide for infrared optoelectronic devices
-
申请号： US15763290申请日： 2015-09-24
-
公开(公告)号： US10826005B2公开(公告)日： 2020-11-03
- 发明人: Sachin Kinge , Jixian Xu , Brandon Sutherland , Sjoerd Hoogland , Edward Sargent
- 申请人： TOYOTA MOTOR EUROPE , THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
- 申请人地址： BE Brussels CA Toronto
- 专利权人： TOYOTA MOTOR EUROPE,THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
- 当前专利权人： TOYOTA MOTOR EUROPE,THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
- 当前专利权人地址： BE Brussels CA Toronto
- 代理机构： Oliff PLC
- 国际申请： PCT/EP2015/072030 WO 20150924
- 国际公布： WO2017/050382 WO 20170330
- 主分类号： H01L51/42
- IPC分类号： H01L51/42 ; H01L31/032 ; H01L31/0352
摘要：
A PIN type infrared photodiode including a first electrode, a n-type semiconductor, an atomic layer deposition coating of lead sulfide, a p-type semiconductor and a second electrode, wherein the n-type semiconductor comprises nanowires conformally coated with the atomic layer deposition coating of lead sulfide.
公开/授权文献
信息查询
IPC分类:
