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公开(公告)号：US10897023B2
公开(公告)日：2021-01-19
申请号：US15765396
申请日：2015-10-02
发明人： Sachin Kinge , Zhenyu Yang , Oleksandr Voznyy , Sjoerd Hoogland , Edward Sargent
摘要： An optoelectronic device has an electron transport layer, an active layer, and a hole transport layer. Each of the electron transport layer, the active layer, and the hole transport layer has quantum dots.
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公开(公告)号：US10826005B2
公开(公告)日：2020-11-03
申请号：US15763290
申请日：2015-09-24
发明人： Sachin Kinge , Jixian Xu , Brandon Sutherland , Sjoerd Hoogland , Edward Sargent
IPC分类号： H01L51/42 , H01L31/032 , H01L31/0352
摘要： A PIN type infrared photodiode including a first electrode, a n-type semiconductor, an atomic layer deposition coating of lead sulfide, a p-type semiconductor and a second electrode, wherein the n-type semiconductor comprises nanowires conformally coated with the atomic layer deposition coating of lead sulfide.
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公开(公告)号：US11551928B2
公开(公告)日：2023-01-10
申请号：US17265420
申请日：2018-08-03
申请人： TOYOTA MOTOR EUROPE
发明人： Sachin Kinge , Hannah Johnson , Kevin Sivula , Rebekah Anne Wells
摘要： A method for preparing a semiconducting thin film and device for carrying out the method, wherein the method includes: (1) providing a liquid-liquid interface; (2) providing at least one layered semiconductor material or its precursor(s) in the form of particles in a solvent in the form of a dispersion; (3) injecting the dispersion at the liquid-liquid interface, in order to obtain an assembly of semiconductor/semiconductor precursor particles; (4) bringing the assembly of into contact with a flexible substrate; and (5) applying a surface pressure to the dispersion to obtain a particle film of semiconductor/semiconductor precursor on the substrate, wherein the first solvent has a higher density than the second solvent.
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公开(公告)号：US11306002B2
公开(公告)日：2022-04-19
申请号：US16491741
申请日：2017-03-07
摘要： The present invention relates to a process for the synthesis of a composite material comprising steps of: (a) reacting gaseous magnesium (Mg) and silica (SiO2) in an inert atmosphere; (b) washing the product obtained in step (a) in an acidic medium; and (c) reacting further gaseous magnesium (Mg) with the silica (SiO2) and silicon (Si) product obtained in step (b). The process of the invention allows Mg2Si/MgO nanocomposites to be prepared without too many separate steps, and wherein the MgO phase is homogeneously dispersed within the Mg2Si matrix. The nanocomposites obtained may for example find practical application as thermoelectric materials in thermoelectric generators.
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公开(公告)号：US12040185B2
公开(公告)日：2024-07-16
申请号：US17613324
申请日：2019-05-22
申请人： TOYOTA MOTOR EUROPE
发明人： Hannah Johnson , Sachin Kinge , Kevin Sivula , Rebekah Anne Wells
CPC分类号： H01L21/02568 , B05D1/204 , B05D1/206 , H01L21/02422 , H01L21/02628
摘要： A device for coating semiconductor/semiconductor precursor particles on a flexible substrate and a preparation method of a semiconducting thin film, wherein the device includes: a container for a first and second solvent substantially immiscible; injection means for injecting a predetermined dispersion volume of at least one layered semiconductor particle material or its precursor(s), occurring at a liquid-liquid interface formed within the container and between the first and second solvent, and creating a particle film at the liquid-liquid interface; a first support means; substrate extracting means; substrate supply means; compression means, reducing a distance between particles and push the film onto the substrate, wherein the compression means includes several pushing means mounted on a drive device, wherein at least two of the several pushing means are at least partially submerged in the second solvent during drive device rotation, and moved through the second solvent toward the first support means.
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公开(公告)号：US11646202B2
公开(公告)日：2023-05-09
申请号：US16326508
申请日：2016-08-30
申请人： TOYOTA MOTOR EUROPE
CPC分类号： H01L21/02568 , C01B19/04 , C30B7/14 , C30B29/46 , H01L21/0242 , H01L21/02425 , H01L21/02601 , H01L21/02628 , C01P2002/84 , C01P2004/03 , C01P2004/04 , C01P2004/24 , C01P2006/40
摘要： A process for preparing stacks of metal chalcogenide flakes includes: (a) reacting together a source of the metal atom of the target metal chalcogenide with a source of the chalcogenide atom of the target metal chalcogenide, in the presence of a spacer, so as to produce flakes of the metal chalcogenide; (b) depositing metal chalcogenide flakes obtained using step (a) onto a substrate to form a stack of assembled metal chalcogenide flakes, wherein the spacer contains an alkyl chain linked to a functional group able to bond to the metal chalcogenide surface, said alkyl chain having a length of less than 18 carbon atoms, preferably between 6 and 14 carbon atoms.
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公开(公告)号：US09917218B2
公开(公告)日：2018-03-13
申请号：US15114267
申请日：2014-02-06
发明人： Sachin Kinge , Enrique Canovas Diaz , Mischa Bonn
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035218 , H01L21/0237 , H01L21/02521 , H01L21/0256 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L31/035236 , H01L31/1836 , H01L31/1868
摘要： The present invention presents a process for preparing a quantum dot array comprising at least the steps of: (a) providing a crystalline semiconductor substrate surface; (b) depositing quantum dots on the said substrate surface by a process of successive ionic layer adsorption and reaction (SILAR). The steps can be repeated to build up a quantum dot superlattice structure.
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