- 专利标题: Single crystal grain structure seals and method of forming
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申请号: US14695981申请日: 2015-04-24
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公开(公告)号: US10830357B2公开(公告)日: 2020-11-10
- 发明人: Michael G. McCaffrey , Jeffrey M. Wittman , Dilip M. Shah , Alan D. Cetel , Timothy M. Davis , Mark J. Rogers
- 申请人: UNITED TECHNOLOGIES CORPORATION
- 申请人地址: US CT Farmington
- 专利权人: RAYTHEON TECHNOLOGIES CORPORATION
- 当前专利权人: RAYTHEON TECHNOLOGIES CORPORATION
- 当前专利权人地址: US CT Farmington
- 代理机构: Cantor Colburn LLP
- 主分类号: F16J15/08
- IPC分类号: F16J15/08 ; B21B1/46 ; F01D11/00 ; C30B33/00 ; C30B29/52 ; C30B11/14 ; F16J15/02
摘要:
The present disclosure relates to advanced materials, particularly single crystal grain structures including the formation of single crystal grain structures. Single crystal grain structures offer improved mechanical properties when used with individual components. Improving mechanical properties is favorable for components that are used in applications with high temperature, pressure, and stress. In these applications, mechanical failure is extremely undesirable. Individual components, such as seals, can be designed with a single crystal grain structure in a preferred direction. By selecting a preferred direction, and orienting the single crystal grain structure accordingly, the single crystal grain structure can improve the component's mechanical properties. Single crystal grain structure seals and the method of forming the seals, therefore, offer various improvements to individual components, specifically when the components are designed for high temperature, pressure, and stress applications.