Invention Grant
- Patent Title: Low DC resistance and high RF resistance power amplifier choke inductor
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Application No.: US15722446Application Date: 2017-10-02
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Publication No.: US10832848B2Publication Date: 2020-11-10
- Inventor: Daeik Daniel Kim , Bonhoon Koo , Babak Nejati
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01F17/00
- IPC: H01F17/00 ; H01F41/04 ; H05K1/16 ; H01F27/28 ; H05K3/46
Abstract:
A multi-layer spiral inductive array includes a first multi-layer spiral inductor with a second layer matching a spiral pattern of a first layer. The multi-layer spiral inductive array also includes a second multi-layer spiral inductor with a third layer matching a spiral pattern of a fourth layer. The second multi-layer spiral inductor is coupled in series with the first multi-layer spiral inductor.
Public/Granted literature
- US20180374622A1 LOW DC RESISTANCE AND HIGH RF RESISTANCE POWER AMPLIFIER CHOKE INDUCTOR Public/Granted day:2018-12-27
Information query
IPC分类:
| H | 电学 |
| H01 | 基本电气元件 |
| H01F | 磁体；电感；变压器；磁性材料的选择 |
| H01F17/00 | 信号类型的固定电感器 |
