Invention Grant
- Patent Title: Tapered fin-type field-effect transistors
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Application No.: US16101963Application Date: 2018-08-13
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Publication No.: US10832967B2Publication Date: 2020-11-10
- Inventor: Hui Zang , Ruilong Xie , Garo Jacques Derderian
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Francois Pagette
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L29/06 ; H01L27/088

Abstract:
Device structures and fabrication methods for a field-effect transistor. A semiconductor fin includes a first section and a second section in a lengthwise arrangement, a first gate structure overlapping the first section of the semiconductor fin, and a second gate structure overlapping the second section of the semiconductor fin. A pillar is arranged in the first section of the semiconductor fin. The pillar extends through a height of the semiconductor fin and across a width of the semiconductor fin.
Public/Granted literature
- US20200051868A1 TAPERED FIN-TYPE FIELD-EFFECT TRANSISTORS Public/Granted day:2020-02-13
Information query
IPC分类: