Invention Grant
- Patent Title: Tungsten deposition without barrier layer
-
Application No.: US16588235Application Date: 2019-09-30
-
Publication No.: US10854461B2Publication Date: 2020-12-01
- Inventor: Yihong Chen , Yong Wu , Chia Cheng Chin , Srinivas Gandikota , Kelvin Chan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/02 ; H01L21/768 ; H01L21/3205
Abstract:
Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.
Public/Granted literature
- US20200027738A1 Tungsten Deposition Without Barrier Layer Public/Granted day:2020-01-23
Information query
IPC分类:
