Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16867634Application Date: 2020-05-06
-
Publication No.: US10854562B2Publication Date: 2020-12-01
- Inventor: Seok-Ho Shin , Bonhwi Gu , Hyekyeong Kweon , Sungjin Kim , Joodong Kim , Jaepil Lee , Dongwon Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2018-0006538 20180118
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/532 ; H01L23/535 ; H01L23/522 ; H01L21/66

Abstract:
A semiconductor device includes a semiconductor substrate having a chip region and an edge region, a plurality of connection structures provided in a lower insulating layer of the edge region and arranged at first intervals in a first direction, an upper insulating layer covering the connection structures, and a plurality of redistribution pads disposed on the upper insulating layer and connected to the connection structures, respectively. Each of the redistribution pads includes a pad portion provided on the chip region. The pad portions of the redistribution pads are spaced apart from the connection structures by a first distance in a second direction intersecting the first direction when viewed in a plan view.
Public/Granted literature
- US20200266162A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-08-20
Information query
IPC分类: