Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16507240Application Date: 2019-07-10
-
Publication No.: US10854589B2Publication Date: 2020-12-01
- Inventor: Satoru Sugita , Ryota Tanabe , Shunsuke Arai
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2017-006938 20170118
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/31 ; H01L23/367 ; H01L23/473 ; H01L29/417 ; H02M7/537

Abstract:
A semiconductor device includes a first semiconductor module and a second semiconductor module. The first semiconductor module configures an upper arm, and includes first semiconductor elements connected in parallel to each other, a sealing resin body, and a positive electrode terminal. The second semiconductor module configures a lower arm, and includes second semiconductor elements connected in parallel to each other, a sealing resin body, and a negative electrode terminal. The first and second semiconductor modules are aligned in an alignment direction. At least one of the first and second semiconductor modules has a relay terminal for electrically relaying electrodes on a low potential side of the first semiconductor elements and electrodes on a high potential side of the second semiconductor elements.
Public/Granted literature
- US20190333909A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-10-31
Information query
IPC分类: