Invention Grant
- Patent Title: Buried word line of a dynamic random access memory and method for fabricating the same
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Application No.: US16406017Application Date: 2019-05-08
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Publication No.: US10854613B2Publication Date: 2020-12-01
- Inventor: Feng-Yi Chang , Chun-Hsien Lin , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou
- Agent Winston Hsu
- Priority: CN201711146632 20171117
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/423 ; H01L29/49 ; H01L21/02 ; H01L29/51 ; H01L29/06
Abstract:
A method for fabricating a buried word line (BWL) of a dynamic random access memory (DRAM) includes the steps of: forming a first doped region in a substrate; removing part of the first doped region to form a trench in the substrate; forming a gate structure in the trench; and forming a barrier structure between the gate structure and the first doped region.
Public/Granted literature
- US20190267385A1 BURIED WORD LINE OF A DYNAMIC RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-08-29
Information query
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