Invention Grant
- Patent Title: EUV light source and apparatus for lithography
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Application No.: US16415642Application Date: 2019-05-17
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Publication No.: US10859928B2Publication Date: 2020-12-08
- Inventor: Yu-Chih Chen , Sheng-Kang Yu , Chi Yang , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H05G2/00

Abstract:
An extreme ultraviolet (EUV) radiation source apparatus includes a collector and a target droplet generator for generating a tin (Sn) droplet. A debris collection device is disposed over a reflection surface of the collector, and at least one drip hole is located between the debris collection device and the collector. A tin bucket for collecting debris from the debris collection device is located below the at least one drip hole, and a tube or guide rod extends from the drip hole to the tin bucket.
Public/Granted literature
- US20200004167A1 EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY Public/Granted day:2020-01-02
Information query
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