Invention Grant
- Patent Title: Resonant structure for a plasma processing system
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Application No.: US14838839Application Date: 2015-08-28
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Publication No.: US10861679B2Publication Date: 2020-12-08
- Inventor: Barton Lane
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood Herron & Evans LLP
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A processing system is disclosed having a radio frequency (RF) power system coupled to a process chamber via a transmission line. The RF power system is configured to generate RF power at a RF operating frequency. The processing system also includes a resonant structure arranged within the plasma processing chamber that includes at least one resonant substructure configured to resonate according to at least two different resonant modes when at least one resonant frequency associated with at least one of the modes is at or near the RF operating frequency.
Public/Granted literature
- US20160071701A1 RESONANT STRUCTURE FOR A PLASMA PROCESSING SYSTEM Public/Granted day:2016-03-10
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