- 专利标题: Memory cells with butted contacts and method of forming same
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申请号: US16395703申请日: 2019-04-26
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公开(公告)号: US10861859B2公开(公告)日: 2020-12-08
- 发明人: You Che Chuang , Chih-Ming Lee , Hsin-Chi Chen , Hsun-Ying Huang
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: H01L27/11
- IPC分类号: H01L27/11 ; G11C5/06
摘要:
A semiconductor structure includes a first transistor including a first gate structure over a first active region in a substrate, a second transistor including a second gate structure over a second active region in the substrate, and a butted contact electrically connecting the second active region of the second transistor to the first gate structure of the first transistor. The butted contact includes a first portion extending along a first direction and overlapping at least the second active region, and a second portion extending along a second direction different from the first direction and intersecting the first portion. The second portion extends over the first gate structure.
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