Invention Grant
- Patent Title: Three-dimensional semiconductor memory device
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Application No.: US16235217Application Date: 2018-12-28
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Publication No.: US10861863B2Publication Date: 2020-12-08
- Inventor: Jongwon Kim , Minyeong Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0048081 20180425
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11582 ; H01L27/11529 ; H01L27/11573 ; H01L27/11575 ; H01L27/11548 ; H01L23/522 ; H01L27/11519 ; H01L27/11565

Abstract:
A three-dimensional semiconductor memory device includes a horizontal semiconductor layer provided on a lower insulating layer. The horizontal semiconductor layer includes a cell array region and a connection region. An electrode structure is provided including electrodes. The electrodes are stacked on the horizontal semiconductor layer. The electrodes have a staircase structure on the connection region. A plurality of first vertical structures are provided on the cell array region to penetrate the electrode structure. A plurality of second vertical structures are provided on the connection region to penetrate the electrode structure and the horizontal semiconductor layer. Bottom surfaces of the second vertical structures are positioned at a level lower than a bottom surface of the horizontal semiconductor layer.
Public/Granted literature
- US20190333923A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2019-10-31
Information query
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