Invention Grant
- Patent Title: Method of forming tin-containing material film and method of synthesizing a tin compound
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Application No.: US16249067Application Date: 2019-01-16
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Publication No.: US10882873B2Publication Date: 2021-01-05
- Inventor: Seung-min Ryu , Youn-soo Kim , Jae-soon Lim , Youn-joung Cho , Myong-woon Kim , Kang-yong Lee , Sang-ick Lee , Sang-yong Jeon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2016-0163900 20161202
- Main IPC: C07F7/22
- IPC: C07F7/22 ; C23C16/455 ; C23C16/40
Abstract:
A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R1, R2, Q1, Q2, Q3, and Q4 are each independently a C1 to C4 linear or branched alkyl group.
Public/Granted literature
- US20190144472A1 METHOD OF FORMING TIN-CONTAINING MATERIAL FILM AND METHOD OF SYNTHESIZING A TIN COMPOUND Public/Granted day:2019-05-16
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