Invention Grant
- Patent Title: Race-track memory with improved writing scheme
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Application No.: US16539775Application Date: 2019-08-13
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Publication No.: US10885961B2Publication Date: 2021-01-05
- Inventor: Dmytro Apalkov , Sebastian Schafer
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G11C11/15
- IPC: G11C11/15 ; G11C11/16

Abstract:
A memory system includes a memory track including a plurality of magnetic domains having alternating magnetic polarities and positioned along a path, and a plurality of domain walls separating adjacent ones of the plurality of magnetic domains, each one of the domain walls being configured to store data.
Public/Granted literature
- US20200294565A1 RACE-TRACK MEMORY WITH IMPROVED WRITING SCHEME Public/Granted day:2020-09-17
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