• Patent Title: Semiconductor-on-insulator substrate for RF applications
  • Application No.: US16090349
    Application Date: 2017-03-30
  • Publication No.: US10886162B2
    Publication Date: 2021-01-05
  • Inventor: Arnaud CastexOleg Kononchuk
  • Applicant: Soitec
  • Applicant Address: FR Bernin
  • Assignee: Soitec
  • Current Assignee: Soitec
  • Current Assignee Address: FR Bernin
  • Agency: TraskBritt
  • Priority: FR1652782 20160331
  • International Application: PCT/EP2017/057614 WO 20170330
  • International Announcement: WO2017/167923 WO 20171005
  • Main IPC: H01L21/322
  • IPC: H01L21/322 H01L27/12 H01L21/762 H01L21/02
Semiconductor-on-insulator substrate for RF applications
Abstract:
A semiconductor-on-insulator substrate for use in RF applications, such as a silicon-on-insulator substrate, comprises a semiconductor top layer, a buried oxide layer and a passivation layer over a support substrate. In addition, a penetration layer is provided between the passivation layer and the silicon support substrate to ensure sufficient high resistivity below RF features and avoid increased migration of dislocations in the support substrate. RF devices may be fabricated on and/or in such a semiconductor-on-insulator substrate.
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