Invention Grant
- Patent Title: Integrated circuit device with a two-dimensional semiconductor material and a dielectric material that includes fixed charges
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Application No.: US16002656Application Date: 2018-06-07
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Publication No.: US10886265B2Publication Date: 2021-01-05
- Inventor: Ashish Verma Penumatcha , Uygar Avci , Ian Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu P.C.
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L27/088
Abstract:
An embodiment includes an apparatus comprising: a dielectric material including fixed charges, the fixed charges each having a first polarity; a channel comprising a channel material, the channel material including a 2-dimensional (2D) material; a drain node; and a source node including a source material, the source material including at least one of the 2D material and an additional 2D material; wherein the source material: (a) includes charges each having a second polarity that is opposite the first polarity, (b) directly contacts the dielectric material. Other embodiments are described herein.
Information query
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